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  SPEC ڷẸ k

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Specification of polished Sapphire Wafer

  Type:

polished Monocrystalline, SEMI M3-91

  Material:

Kyropolos high-purity monocrystalline AI2O3

  Orientation:

C-, A-, R- Plane ± 0.25 degree, ± 0.10 degree on request

  Diameter:

2 inch - 6 inch ± 0.50 mm, C-Plane: 2 inch - 5 inch

  Physical parameters:

 

  Thickness, Center Point:

SEMI or on request > 0.25 mm

  Toatal Thickness Varaiation TTV:

< 10 microns; typical, other on request

  Bow:

< 15 microns; typical for 2 inch

  Taper:

< 15 microns; typical for 2 inch

  Primary Flat:

SEMI standard, or on request

  Orientation:

according to SEMI standard ± 0.5 deg.

  Front surface finish:

 

  Particles:

< 10 @ 0.3 microns

  Roughness (Ra):

< 1.0 nm; typical, others on request

  Surface quality:

Epitaxial polishing (MIL 20-10)

  Back surface:

 

  Surface quality:

Fine grinding

  Package:

25 wafers, EMPAK Ultrapack cassette, double bagged

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Specification of Ground Sapphire Wafer

  Type:

Ground finish

  Material:

Kyropolos high-purity monocrystalline AI2O3

  Orientation:

C-, A-, R- Plane ± 0.25 degree, ± 0.10 degree on request

  Diameter:

2 inch - 6 inch ± 0.50 mm, C-Plane: 2 inch - 5 inch

  Physical parameters:

 

  Thickness, Center Point:

SEMI or on request > 0.15 mm

  Toatal Thickness Varaiation TTV:

< 20 microns; typical, other on request

  Bow:

< 20 microns; typical for 2 inch

  Taper:

< 20 microns; typical for 2 inch

  Primary Flat:

SEMI standard, or on request

  Orientation:

according to SEMI standard ± 0.5 deg.

  Front surface finish:

 

  Roughness (Ra):

0.8 - 1.2 microns

  Surface quality:

ground, ready for polish

  Back surface:

 

  Roughness (Ra):

0.8 - 1.2 microns

  Surface quality:

ground, ready for polish

  Package:

to prevent breakage