|
|
|
|
Specification of polished Sapphire Wafer |
Type: |
polished Monocrystalline, SEMI M3-91 |
Material: |
Kyropolos high-purity monocrystalline AI2O3 |
Orientation: |
C-, A-, R- Plane ± 0.25 degree, ± 0.10 degree on request |
Diameter: |
2 inch - 6 inch ± 0.50 mm, C-Plane: 2 inch - 5 inch |
Physical parameters: |
|
Thickness, Center Point: |
SEMI or on request > 0.25 mm |
Toatal Thickness Varaiation TTV: |
< 10 microns; typical, other on request |
Bow: |
< 15 microns; typical for 2 inch |
Taper: |
< 15 microns; typical for 2 inch |
Primary Flat: |
SEMI standard, or on request |
Orientation: |
according to SEMI standard ± 0.5 deg. |
Front surface finish: |
|
Particles: |
|
Roughness (Ra): |
< 1.0 nm; typical, others on request |
Surface quality: |
Epitaxial polishing (MIL 20-10) |
Back surface: |
|
Surface quality: |
|
Package: |
25 wafers, EMPAK Ultrapack cassette, double bagged |
|
|
Specification of Ground Sapphire Wafer |
Type: |
|
Material: |
Kyropolos high-purity monocrystalline AI2O3 |
Orientation: |
C-, A-, R- Plane ± 0.25 degree, ± 0.10 degree on request |
Diameter: |
2 inch - 6 inch ± 0.50 mm, C-Plane: 2 inch - 5 inch |
Physical parameters: |
|
Thickness, Center Point: |
SEMI or on request > 0.15 mm |
Toatal Thickness Varaiation TTV: |
< 20 microns; typical, other on request |
Bow: |
< 20 microns; typical for 2 inch |
Taper: |
< 20 microns; typical for 2 inch |
Primary Flat: |
SEMI standard, or on request |
Orientation: |
according to SEMI standard ± 0.5 deg. |
Front surface finish: |
|
Roughness (Ra): |
|
Surface quality: |
|
Back surface: |
|
Roughness (Ra): |
|
Surface quality: |
|
Package: |
|
|
|
|
|
|