Product: GaAs wafer
GaAs electron mobility is around six times that of silicon
Higher speeds are also indirectly realized from the larger GaAs
band gap (1.424eV) vs. that of Si(1.1eV); this results
in reduced parasitic capacitance within the device.
These properties make GaAs devices ideal candidates
for high frequency and high-temperature applications in
broadband telecommunications, data and optical
communications, and for solar cells.