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   Product: GaAs wafer
   
Characteristic:
   GaAs electron mobility is around six times that of silicon
   Higher speeds are also indirectly realized from the larger GaAs
   band gap (1.424eV) vs. that of Si(1.1eV); this results
   in reduced parasitic capacitance within the device.
   These properties make GaAs devices ideal candidates
   for high frequency and high-temperature applications in
   broadband telecommunications, data and optical
   communications, and for solar cells.

   Application:

    aerospace and military applications
    Their ability to operate at very high frequencies and power despite extreme temperatures
    and radiation was required
    high volume commercial applications
    cellular phones and other wireless applications, which require operating frequencies
    that are difficult to achieve with silicon-based devices.
    GaAs optoelectronic devices